Junctionless nanowire transistors effective channel length extraction through capacitance characteristics

Author(s)

Silva, Everton M. ; Trevisoli, Renan ; Doria, Rodrigo T.

• Document type: Journal article
• Source: Solid-State Electronics; v. 208, p. 5-pg., 2023-10-01.

Abstract

This work aims to extract the effective channel length (LEFF) of Junctionless Nanowire Transistors (JNT) through the maximum gate capacitance of the devices. The LEFF extraction has been done by extrapolating the maximum gate capacitance as a function of the devices' channel length (LMASK) and has shown that LEFF is around 10-15 nm longer than LMASK for devices of different channel doping concentrations. (AU)

• FAPESP's process: 19/15500-5 - Atomistic simulation of nanowire MOSFETs electrical properties
• Grantee: Marcelo Antonio Pavanello
• Support Opportunities: Regular Research Grants