Influence of fin width and back bias on the low-frequency noise of long channel SOI nanowires

Author(s)

Molto, Allan Roberto ; Paz, Bruna Cardoso ; Pavanello, Marcelo Antonio ; IEEE

• Document type: Journal article
• Source: 2019 LATIN AMERICAN ELECTRON DEVICES CONFERENCE (LAEDC); v. N/A, p. 4-pg., 2019-01-01.

Abstract

This work studies the influence of fin width and back bias on the low-frequency noise of long channel fully depleted SOI nanowires. Devices with fin widths of 20nm, 45nm and 105nm were studied under different back bias (V-sub) conditions, varying V-sub from -40V to 40V. Nanowires operate in linear regime with gate voltage overdrive varying from OmV to 200mV. Results show lowfrequency noise increase for both positive and negative back bias for long channel devices. For the input referred noise power spectral density as a function of W-fin, it was possible to observe a slight increase of SVG with W-fin decrease. (AU)

• FAPESP's process: 15/10491-7 - Electrical characterization and tridimensional simulation of nanowires MOS transistors
• Grantee: Bruna Cardoso Paz
• Support Opportunities: Scholarships in Brazil - Doctorate