Compact Analytical Model for Trap-Related Low Frequency Noise in Junctionless Transistors

Author(s)

Trevisoli, Renan ; Doria, Rodrigo ; Barraud, Sylvain ; Pavanello, Marcelo ; IEEE

• Document type: Journal article
• Source: 49TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC 2019); v. N/A, p. 4-pg., 2019-01-01.

Abstract

The aim of this work is to propose a compact analytical model for the Low Frequency Noise (LFN) in Junctionless Nanowire Transistors (JNTs). Since JNTs work differently from inversion mode transistors, the noise is also expected to behave differently. To the best of our knowledge, no analytical models have been presented for LFN in these devices. The proposed model is validated through numerical simulations. Experimental results are also used to demonstrate its applicability. (AU)

• FAPESP's process: 14/18041-8 - Electrical characterization and modeling of advanced electronic devices
• Grantee: Renan Trevisoli Doria
• Support Opportunities: Scholarships in Brazil - Post-Doctoral