Optical and electrical characterization of Te and Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy

Author(s)

Piton, Marcelo R. ; Koivusalo, Eero ; Suomalainen, Soile ; Hakkarainen, Teemu ; Souto, S. ; Galeti, Helder V. A. ; Schramm, Andreas ; Gobato, Y. Galvao ; Guina, Mircea ; IEEE

• Document type: Journal article
• Source: 2017 32ND SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO): CHIP ON THE SANDS; v. N/A, p. 4-pg., 2017-01-01.

Abstract

We have investigated optical and electrical properties of Te and Be doped GaAs nanowires (NW) grown by self-catalyzed molecular beam epitaxy. The NWs were grown on p-Si(111) substrates using a novel technique based on lithography-free Si/SiOx patterns fabricated by droplet epitaxy and spontaneous oxidation, which allows synthesis of highly uniform NWs with controllable size and density. The incorporation of Be- and Te-dopants in GaAs NWs was investigated by using transport, photoluminescence (PL) and Raman spectroscopy techniques. (AU)

• FAPESP's process: 14/50513-7 - Tailoring the transport and optical properties if III-Bi-V nanostructures for advanced photonic devices
• Grantee: Helder Vinícius Avanço Galeti
• Support Opportunities: Regular Research Grants
• FAPESP's process: 16/10668-7 - Optical and Transport Properties of two-dimensional semicondutors based on transition metal dichalcogenides
• Grantee: Yara Galvão Gobato
• Support Opportunities: Regular Research Grants