Non-linearity Analysis of Triple Gate SOI Nanowires MOSFETS

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Author(s):	Paz, Bruna Cardoso ; Doria, Rodrigo Trevisoli ; Casse, Mikael ; Barraud, Sylvain ; Reimbold, Gilles ; Vinet, Maud ; Faynot, Olivier ; Pavanello, Marcelo Antonio ; IEEE Total Authors: 9
Document type:	Journal article
Source:	2016 31ST SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO); v. N/A, p. 4-pg., 2016-01-01.
Abstract
This work aims to explore the harmonic distortion of triple gate SOI nanowires MOSFETs, considering long channel devices operating in saturation regime as amplifiers. The Integral Function Method is used to extract the total, second and third order harmonic distortions, which are the main figures of merit analyzed in this work. Low field mobility, surface roughness scattering and series resistance are correlated to the distortion minima. Narrower devices have shown improved linearity. (AU)

FAPESP's process:	15/10491-7 - Electrical characterization and tridimensional simulation of nanowires MOS transistors
Grantee:	Bruna Cardoso Paz
Support Opportunities:	Scholarships in Brazil - Doctorate