A New Method for Junctionless Transistors Parameters Extraction

Author(s)

Trevisoli, Renan ; Doria, Rodrigo T. ; de Souza, Michelly ; Pavanello, Marcelo A. ; Barraud, Sylvain ; IEEE

• Document type: Journal article
• Source: 2017 47TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC); v. N/A, p. 4-pg., 2017-01-01.

Abstract

This work proposes a new method for the extraction of the flatband voltage, effective nanowire width and doping concentration of junctionless nanowire transistors. The accurate extraction of such parameters is essential for the understating of the device behavior and for the prediction of its performance in circuits through analytical models. The method is validated using 3D numerical simulations and has been applied to experimental short-channel devices proving its applicability. (AU)

• FAPESP's process: 14/18041-8 - Electrical characterization and modeling of advanced electronic devices
• Grantee: Renan Trevisoli Doria
• Support Opportunities: Scholarships in Brazil - Post-Doctoral