Electrical parameters and low-frequency noise of AlGaN/GaN high-electron mobility transistors with different channel orientation

Author(s)

de Andrade, Maria Gloria Cano ; Nogueira, Carlos Roberto ; Graciano Junior, Nilton ; Doria, Rodrigo T. ; Trevisoli, Renan ; Simoen, Eddy

• Document type: Journal article
• Source: Solid-State Electronics; v. 211, p. 5-pg., 2023-11-09.

Abstract

The performance of AlGaN/GaN High-Electron Mobility Transistors (HEMTs) fabricated on (111) silicon substrates has been experimentally investigated, aiming to verify the effect of different channel orientations on the main electrical parameters, such as drain current (ID), threshold voltage, transconductance (gm), and DrainInduced Barrier Lowering (DIBL). Moreover, the noise Power Spectral Density (PSD) with different channel orientations has also been characterized in linear operation. No noticeable differences on the electrical and noise PSD characteristics have been observed between the GaN channel orientations (0 degrees, 90 degrees and 45 degrees). (AU)

• FAPESP's process: 23/00123-7 - TCAD simulation of advanced semiconductor devices
• Grantee: Maria Glória Caño de Andrade
• Support Opportunities: Regular Research Grants
• FAPESP's process: 23/08068-5 - INFO 2023 - Conference on Insulating Films on Semiconductors
• Grantee: Renan Trevisoli Doria
• Support Opportunities: Research Grants - Meeting - Abroad
• FAPESP's process: 19/15500-5 - Atomistic simulation of nanowire MOSFETs electrical properties
• Grantee: Marcelo Antonio Pavanello
• Support Opportunities: Regular Research Grants