One step a-Si: H TFT'S with PECVD SiOxNy gate insulator

K.F Albertin; I Pereyra

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(Reference retrieved automatically from SciELO through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

One step a-Si: H TFT'S with PECVD SiOxNy gate insulator

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Author(s):	K.F Albertin ^[1] ; I Pereyra ^[2] Total Authors: 2
Affiliation:	^[1] University of São Paulo - Brasil ^[2] University of São Paulo - Brasil Total Affiliations: 2
Document type:	Journal article
Source:	REVISTA MEXICANA DE FISICA; v. 52, p. 83-85, 2006-02-00.
Abstract
Amorphous silicon thin film transistors (TFT's), utilizing silicon dioxide (SiO2), silicon oxynitride (SiOxNy) and silicon nitride (Si3N4) obtained by PECVD as gate insulating material, are fabricated through just one masking process and characterized by drain current vs drain voltage and by drain current vs gate voltage (Ids vs. Vds and Ids vs. Vgs) measurements. (AU)

FAPESP's process:	00/10027-3 - Production, characterization and applications of semiconducting and insulating
Grantee:	Ines Pereyra
Support Opportunities:	Research Projects - Thematic Grants

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