The graded-channel soi mosfet to alleviate the parasitic bipolar effect and improve the output characteristics.

Grant number:	99/00623-9
Support Opportunities:	Research Grants - Meeting - Abroad
Start date:	May 02, 1999
End date:	May 07, 1999
Field of knowledge:	Engineering - Electrical Engineering - Electrical Materials

Principal Investigator:	João Antonio Martino
Grantee:	João Antonio Martino

Host Institution:	Escola Politécnica (EP). Universidade de São Paulo (USP). São Paulo , SP, Brazil

Articles published in Agência FAPESP Newsletter about the research grant:

TITULO

Articles published in other media outlets ( ):

More items Less items

VEICULO: TITULO (DATA)