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Helder Vinícius Avanço Galeti

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Universidade Federal de São Carlos (UFSCAR). Centro de Ciências Exatas e de Tecnologia (CCET)  (Institutional affiliation for the last research proposal)
Birthplace: Brazil

Graduate at Physics - the Federal University of São Carlos (2004), master's at Condensed Matter Physics - Federal University of São Carlos (2007) and doctorate at Condensed Matter Physics - Federal University of São Carlos (2012). Has experience in Physics, focusing on Optical and Electrical Properties of the Condensed Matter, acting on the following subjects: Semiconductor materials and nanostructures, electronic & optical properties, structural properties, semiconductor spintronics, photovoltaics, magneto-optics, resonant tunneling diodes. Associate Professor I, Department of Electrical Engineering, Federal University of São Carlos (UFSCar). He has a degree in basic and applied physics from UFSCar, where he completed his bachelor's degree (2005), full degree (2007), master's (2007) and PhD (2012) in Condensed Matter Physics. He also completed a post-doctorate (2012-2013) at UFSCar with a FAPESP grant. He has experience in Physics and Electrical Engineering, with an emphasis on optical, magneto-optical, structural and electronic transport of materials and semiconductor devices, working mainly on the following topics: semiconductor nanostructures III-V, resonant tunneling diodes, III -V semiconductor nanowires, III-V semiconductor quantum dots, high-disorder alloys based on materials III-Bi / N-V, GeSn and GeSiSn, semiconductor oxides, spintronica. He coordinates research projects on optoelectronics and photonics with international cooperation, in addition to supervise undergraduate and graduate students. He was coordinator of the Electrical Engineering course at UFSCar in the period 08/2018 - 02/2021. (Source: Lattes Curriculum)

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Scholarships in Brazil
FAPESP support in numbers * Updated May 15, 2021
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Use this Research Supported by FAPESP (BV/FAPESP) channel only to send messages referring to FAPESP-funded scientific projects.


 

 

 

 

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Scientific publications resulting from Research Grants and Scholarships under the grantee's responsibility (24)

(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)

Publications24
Citations63
Cit./Article2.6
Data from Web of Science

SOUTO, S.; HILSKA, J.; GOBATO, Y. GALVAO; SOUZA, D.; ANDRADE, M. B.; KOIVUSALO, E.; PUUSTINEN, J.; GUINA, M.. Raman spectroscopy of GaSb1-xBix alloys with high Bi content. Applied Physics Letters, v. 116, n. 20, . Web of Science Citations: 0. (14/50513-7, 16/10668-7)

BALANTA, M. A. G.; ORSI GORDO, V.; CARVALHO, A. R. H.; PUUSTINEN, J.; ALGHAMDI, H. M.; HENINI, M.; GALETI, H. V. A.; GUINA, M.; GALVAO GOBATO, Y.. Polarization resolved photoluminescence in GaAs1-xBix/GaAs quantum wells. Journal of Luminescence, v. 182, p. 49-52, . Web of Science Citations: 4. (14/50513-7, 12/24055-6)

AL MASHARY, FAISAL S.; DE CASTRO, SUELEN; DA SILVA, ARLON FERNANDO; FELIX, JORLANDIO FRANCISCO; PITON, MARCELO RIZZO; AVANCO GALETI, HELDER VINICIUS; RODRIGUES, ARIANO DE GIOVANNI; GOBATO, YARA GALVAO; AL SAQRI, NOOR; HENINI, MOHAMED; et al. Effect of growth techniques on the structural, optical and electrical properties of indium doped TiO2 thin films. Journal of Alloys and Compounds, v. 766, p. 194-203, . Web of Science Citations: 6. (16/10668-7, 14/50513-7)

BALANTA, M. A. G.; KOPACZEK, J.; ORSI GORDO, V.; SANTOS, B. H. B.; RODRIGUES, A. D.; GALETI, H. V. A.; RICHARDS, R. D.; BASTIMAN, F.; DAVID, J. P. R.; KUDRAWIEC, R.; et al. Optical and spin properties of localized and free excitons in GaBixAs1-x/GaAs multiple quantum wells. JOURNAL OF PHYSICS D-APPLIED PHYSICS, v. 49, n. 35, . Web of Science Citations: 7. (16/07239-7, 14/50513-7, 12/24055-6)

BALANTA, M. A. G.; DE OLIVEIRA, P. B. A.; ALBALAWI, H.; GALVAO GOBATO, Y.; GALETI, H. V. A.; RODRIGUES, A. D.; HENINI, M.; ALMOSNI, S.; ROBERT, C.; BALOCCHI, A.; et al. Effects of nitrogen incorporation and thermal annealing on the optical and spin properties of GaPN dilute nitride alloys. Journal of Alloys and Compounds, v. 814, . Web of Science Citations: 1. (16/10668-7, 14/50513-7)

GALETI, H. V. A.; GALVAO GOBATO, Y.; BRASIL, M. J. S. P.; TAYLOR, D.; HENINI, M.. Voltage- and Light-Controlled Spin Properties of a Two-Dimensional Hole Gas in p-Type GaAs/AlAs Resonant Tunneling Diodes. JOURNAL OF ELECTRONIC MATERIALS, v. 47, n. 3, p. 1780-1785, . Web of Science Citations: 0. (12/24055-6, 16/10668-7)

MONDAL, SANJIB; GHOSH, ANUPAM; RIZZO PITON, M.; GOMES, JOAQUIM P.; FELIX, JORLANDIO F.; GALVAO GOBATO, Y.; AVANCO GALETI, H. V.; CHOUDHURI, B.; DWIVEDI, S. M. M. DHAR; HENINI, M.; et al. Investigation of optical and electrical properties of erbium-doped TiO2 thin films for photodetector applications. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, v. 29, n. 22, p. 19588-19600, . Web of Science Citations: 3. (16/10668-7)

ORSI GORDO, V.; GALVO GOBATO, Y.; GALETI, H. V. A.; BRASIL, M. J. S. P.; TAYLOR, D.; HENINI, M.. Spin Polarization of Carriers in InGaAs Self-Assembled Quantum Rings Inserted in GaAs-AlGaAs Resonant Tunneling Devices. JOURNAL OF ELECTRONIC MATERIALS, v. 46, n. 7, p. 3851-3856, . Web of Science Citations: 2. (16/07239-7, 12/24055-6)

CARVALHO, A. R. H.; GORDO, V. ORSI; GALETI, H. V. A.; GOBATO, Y. GALVAO; DE GODOY, M. P. F.; KUDRAWIEC, R.; LEMINE, O. M.; HENINI, M.. Magneto-optical properties of GaBiAs layers. JOURNAL OF PHYSICS D-APPLIED PHYSICS, v. 47, n. 7, . Web of Science Citations: 9. (12/24055-6)

LEMINE, O. M.; ALKAOUD, A.; AVANCO GALETI, H. V.; GORDO, V. ORSI; GOBATO, Y. GALVAO; BOUZID, HOUCINE; HAJRY, A.; HENINI, M.. Thermal annealing effects on the optical and structural properties of (100) GaAs1-xBix layers grown by Molecular Beam Epitaxy. SUPERLATTICES AND MICROSTRUCTURES, v. 65, p. 48-55, . Web of Science Citations: 14. (12/24055-6)

ARAUJO E NOBREGA, J.; ORSI GORDO, V.; GALETI, H. V. A.; GALVAO GOBATO, Y.; BRASIL, M. J. S. P.; TAYLOR, D.; ORLITA, M.; HENINI, M.. Spin polarization of carriers in resonant tunneling devices containing InAs self-assembled quantum dots. SUPERLATTICES AND MICROSTRUCTURES, v. 88, p. 574-581, . Web of Science Citations: 2. (12/24055-6)

SOUTO, S.; HILSKA, J.; GOBATO, Y. GALVAO; SOUZA, D.; ANDRADE, M. B.; KOIVUSALO, E.; PUUSTINEN, J.; GUINA, M.. Raman spectroscopy of GaSb1-xBix alloys with high Bi content. Applied Physics Letters, v. 116, n. 20, . Web of Science Citations: 0. (14/50513-7, 16/10668-7)

BALANTA, M. A. G.; ORSI GORDO, V.; CARVALHO, A. R. H.; PUUSTINEN, J.; ALGHAMDI, H. M.; HENINI, M.; GALETI, H. V. A.; GUINA, M.; GALVAO GOBATO, Y.. Polarization resolved photoluminescence in GaAs1-xBix/GaAs quantum wells. Journal of Luminescence, v. 182, p. 49-52, . Web of Science Citations: 4. (14/50513-7, 12/24055-6)

AL MASHARY, FAISAL S.; DE CASTRO, SUELEN; DA SILVA, ARLON FERNANDO; FELIX, JORLANDIO FRANCISCO; PITON, MARCELO RIZZO; AVANCO GALETI, HELDER VINICIUS; RODRIGUES, ARIANO DE GIOVANNI; GOBATO, YARA GALVAO; AL SAQRI, NOOR; HENINI, MOHAMED; et al. Effect of growth techniques on the structural, optical and electrical properties of indium doped TiO2 thin films. Journal of Alloys and Compounds, v. 766, p. 194-203, . Web of Science Citations: 6. (16/10668-7, 14/50513-7)

BALANTA, M. A. G.; KOPACZEK, J.; ORSI GORDO, V.; SANTOS, B. H. B.; RODRIGUES, A. D.; GALETI, H. V. A.; RICHARDS, R. D.; BASTIMAN, F.; DAVID, J. P. R.; KUDRAWIEC, R.; et al. Optical and spin properties of localized and free excitons in GaBixAs1-x/GaAs multiple quantum wells. JOURNAL OF PHYSICS D-APPLIED PHYSICS, v. 49, n. 35, . Web of Science Citations: 7. (16/07239-7, 14/50513-7, 12/24055-6)

BALANTA, M. A. G.; DE OLIVEIRA, P. B. A.; ALBALAWI, H.; GALVAO GOBATO, Y.; GALETI, H. V. A.; RODRIGUES, A. D.; HENINI, M.; ALMOSNI, S.; ROBERT, C.; BALOCCHI, A.; et al. Effects of nitrogen incorporation and thermal annealing on the optical and spin properties of GaPN dilute nitride alloys. Journal of Alloys and Compounds, v. 814, . Web of Science Citations: 1. (16/10668-7, 14/50513-7)

GALETI, H. V. A.; GALVAO GOBATO, Y.; BRASIL, M. J. S. P.; TAYLOR, D.; HENINI, M.. Voltage- and Light-Controlled Spin Properties of a Two-Dimensional Hole Gas in p-Type GaAs/AlAs Resonant Tunneling Diodes. JOURNAL OF ELECTRONIC MATERIALS, v. 47, n. 3, p. 1780-1785, . Web of Science Citations: 0. (12/24055-6, 16/10668-7)

MONDAL, SANJIB; GHOSH, ANUPAM; RIZZO PITON, M.; GOMES, JOAQUIM P.; FELIX, JORLANDIO F.; GALVAO GOBATO, Y.; AVANCO GALETI, H. V.; CHOUDHURI, B.; DWIVEDI, S. M. M. DHAR; HENINI, M.; et al. Investigation of optical and electrical properties of erbium-doped TiO2 thin films for photodetector applications. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, v. 29, n. 22, p. 19588-19600, . Web of Science Citations: 3. (16/10668-7)

ORSI GORDO, V.; GALVO GOBATO, Y.; GALETI, H. V. A.; BRASIL, M. J. S. P.; TAYLOR, D.; HENINI, M.. Spin Polarization of Carriers in InGaAs Self-Assembled Quantum Rings Inserted in GaAs-AlGaAs Resonant Tunneling Devices. JOURNAL OF ELECTRONIC MATERIALS, v. 46, n. 7, p. 3851-3856, . Web of Science Citations: 2. (16/07239-7, 12/24055-6)

CARVALHO, A. R. H.; GORDO, V. ORSI; GALETI, H. V. A.; GOBATO, Y. GALVAO; DE GODOY, M. P. F.; KUDRAWIEC, R.; LEMINE, O. M.; HENINI, M.. Magneto-optical properties of GaBiAs layers. JOURNAL OF PHYSICS D-APPLIED PHYSICS, v. 47, n. 7, . Web of Science Citations: 9. (12/24055-6)

AWAN, I. T.; GALETI, H. V. A.; GALVAO GOBATO, Y.; BRASIL, M. J. S. P.; TAYLOR, D.; HENINI, M.. Effects of Be acceptors on the spin polarization of carriers in p-i-n resonant tunneling diodes. Journal of Applied Physics, v. 116, n. 5, . Web of Science Citations: 0. (11/20985-6, 12/24055-6)

ORSI GORDO, V.; BALANTA, M. A. G.; GALVAO GOBATO, Y.; COVRE, F. S.; GALETI, H. V. A.; IIKAWA, F.; COUTO, JR., O. D. D.; QU, F.; HENINI, M.; HEWAK, D. W.; et al. Revealing the nature of low-temperature photoluminescence peaks by laser treatment in van der Waals epitaxially grown WS2 monolayers. NANOSCALE, v. 10, n. 10, p. 4807-4815, . Web of Science Citations: 7. (16/10668-7, 14/50513-7, 12/11382-9, 16/16365-6)

GALETI, H. V. A.; BEZERRA, A. T.; GALVAO GOBATO, Y.; BRASIL, M. J. S. P.; TAYLOR, D.; HENINI, M.. Optical and electrical control of spin polarization of two-dimensional hole gases in p-type resonant tunnelling devices. JOURNAL OF PHYSICS D-APPLIED PHYSICS, v. 46, n. 50, . Web of Science Citations: 1. (12/24055-6)

GALETI, H. V. A.; BRASIL, M. J. S. P.; GALVAO GOBATO, Y.; HENINI, M.. Voltage controlled electron spin dynamics in resonant tunnelling devices. JOURNAL OF PHYSICS D-APPLIED PHYSICS, v. 47, n. 16, . Web of Science Citations: 1. (11/20985-6, 12/24055-6)

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