CV Lattes
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Universidade Federal de São Carlos (UFSCAR). Centro de Ciências Exatas e de Tecnologia (CCET) (Institutional affiliation for the last research proposal) Birthplace: Brazil
Graduate at Physics - the Federal University of São Carlos (2004), master's at Condensed Matter Physics - Federal University of São Carlos (2007) and doctorate at Condensed Matter Physics - Federal University of São Carlos (2012). Has experience in Physics, focusing on Optical and Electrical Properties of the Condensed Matter, acting on the following subjects: Semiconductor materials and nanostructures, electronic & optical properties, structural properties, semiconductor spintronics, photovoltaics, magneto-optics, resonant tunneling diodes. Associate Professor I, Department of Electrical Engineering, Federal University of São Carlos (UFSCar). He has a degree in basic and applied physics from UFSCar, where he completed his bachelor's degree (2005), full degree (2007), master's (2007) and PhD (2012) in Condensed Matter Physics. He also completed a post-doctorate (2012-2013) at UFSCar with a FAPESP grant. He has experience in Physics and Electrical Engineering, with an emphasis on optical, magneto-optical, structural and electronic transport of materials and semiconductor devices, working mainly on the following topics: semiconductor nanostructures III-V, resonant tunneling diodes, III -V semiconductor nanowires, III-V semiconductor quantum dots, high-disorder alloys based on materials III-Bi / N-V, GeSn and GeSiSn, semiconductor oxides, spintronica. He coordinates research projects on optoelectronics and photonics with international cooperation, in addition to supervise undergraduate and graduate students. He was coordinator of the Electrical Engineering course at UFSCar in the period 08/2018 - 02/2021. (Source: Lattes Curriculum)
Dilute-bismide compounds of the form III-Bi-V are a prospective class of 'highly mismatched' alloys (HMAs) in which a small fraction of the host atoms is replaced by a very different element, i.e. another group III or V atom. Bismides have been predicted to provide new fundamental material physics that could lead to significant enhancement in the perfor-mance of optoelectronic and photoni…
The project aims at breakthrough developments concerning the technology and applications of emerging III-Bi-V semiconductor materiais, nanostructures and nanodevices such as solar cells and lasers. We will combine the state-of-the-art material synthesis and device fabrication facilities available at the Optoelectronics Research Centre (Finnish partners) with the broad expertise of transpo…
In this proposal, we plan to perform a systematic investigation of optical and magneto-optical properties of semiconductor nanostructures emphasizing the dynamic properties of spin. In particular, we propose to study the polarization resolved and time resolved photoluminescence in the presence of magnetic fields of InGaAsN / GaAs and GaAsBi nanostructures grown in different crystallograph…
| 1 / 1 | Ongoing research grants |
| 3 / 3 | Completed research grants |
| 3 / 1 | Completed scholarships in Brazil |
| 7 / 5 | All research grants and scholarships |
| Associated processes | |
(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)
| Publications | 24 |
| Citations | 63 |
| Cit./Article | 2.6 |
| Data from Web of Science | |
SOUTO, S.; HILSKA, J.; GOBATO, Y. GALVAO; SOUZA, D.; ANDRADE, M. B.; KOIVUSALO, E.; PUUSTINEN, J.; GUINA, M.. Raman spectroscopy of GaSb1-xBix alloys with high Bi content. Applied Physics Letters, v. 116, n. 20, MAY 18 2020. Web of Science Citations: 0. (14/50513-7, 16/10668-7)
BALANTA, M. A. G.; ORSI GORDO, V.; CARVALHO, A. R. H.; PUUSTINEN, J.; ALGHAMDI, H. M.; HENINI, M.; GALETI, H. V. A.; GUINA, M.; GALVAO GOBATO, Y.. Polarization resolved photoluminescence in GaAs1-xBix/GaAs quantum wells. Journal of Luminescence, v. 182, p. 49-52, FEB 2017. Web of Science Citations: 4. (14/50513-7, 12/24055-6)
AL MASHARY, FAISAL S.; DE CASTRO, SUELEN; DA SILVA, ARLON FERNANDO; FELIX, JORLANDIO FRANCISCO; PITON, MARCELO RIZZO; AVANCO GALETI, HELDER VINICIUS; RODRIGUES, ARIANO DE GIOVANNI; GOBATO, YARA GALVAO; AL SAQRI, NOOR; HENINI, MOHAMED; et al. Effect of growth techniques on the structural, optical and electrical properties of indium doped TiO2 thin films. Journal of Alloys and Compounds, v. 766, p. 194-203, OCT 25 2018. Web of Science Citations: 6. (16/10668-7, 14/50513-7)
BALANTA, M. A. G.; KOPACZEK, J.; ORSI GORDO, V.; SANTOS, B. H. B.; RODRIGUES, A. D.; GALETI, H. V. A.; RICHARDS, R. D.; BASTIMAN, F.; DAVID, J. P. R.; KUDRAWIEC, R.; et al. Optical and spin properties of localized and free excitons in GaBixAs1-x/GaAs multiple quantum wells. JOURNAL OF PHYSICS D-APPLIED PHYSICS, v. 49, n. 35, SEP 7 2016. Web of Science Citations: 7. (16/07239-7, 14/50513-7, 12/24055-6)
BALANTA, M. A. G.; DE OLIVEIRA, P. B. A.; ALBALAWI, H.; GALVAO GOBATO, Y.; GALETI, H. V. A.; RODRIGUES, A. D.; HENINI, M.; ALMOSNI, S.; ROBERT, C.; BALOCCHI, A.; et al. Effects of nitrogen incorporation and thermal annealing on the optical and spin properties of GaPN dilute nitride alloys. Journal of Alloys and Compounds, v. 814, JAN 25 2020. Web of Science Citations: 1. (16/10668-7, 14/50513-7)
GALETI, H. V. A.; GALVAO GOBATO, Y.; BRASIL, M. J. S. P.; TAYLOR, D.; HENINI, M.. Voltage- and Light-Controlled Spin Properties of a Two-Dimensional Hole Gas in p-Type GaAs/AlAs Resonant Tunneling Diodes. JOURNAL OF ELECTRONIC MATERIALS, v. 47, n. 3, p. 1780-1785, MAR 2018. Web of Science Citations: 0. (12/24055-6, 16/10668-7)
MONDAL, SANJIB; GHOSH, ANUPAM; RIZZO PITON, M.; GOMES, JOAQUIM P.; FELIX, JORLANDIO F.; GALVAO GOBATO, Y.; AVANCO GALETI, H. V.; CHOUDHURI, B.; DWIVEDI, S. M. M. DHAR; HENINI, M.; et al. Investigation of optical and electrical properties of erbium-doped TiO2 thin films for photodetector applications. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, v. 29, n. 22, p. 19588-19600, NOV 2018. Web of Science Citations: 3. (16/10668-7)
ORSI GORDO, V.; GALVO GOBATO, Y.; GALETI, H. V. A.; BRASIL, M. J. S. P.; TAYLOR, D.; HENINI, M.. Spin Polarization of Carriers in InGaAs Self-Assembled Quantum Rings Inserted in GaAs-AlGaAs Resonant Tunneling Devices. JOURNAL OF ELECTRONIC MATERIALS, v. 46, n. 7, p. 3851-3856, JUL 2017. Web of Science Citations: 2. (16/07239-7, 12/24055-6)
CARVALHO, A. R. H.; GORDO, V. ORSI; GALETI, H. V. A.; GOBATO, Y. GALVAO; DE GODOY, M. P. F.; KUDRAWIEC, R.; LEMINE, O. M.; HENINI, M.. Magneto-optical properties of GaBiAs layers. JOURNAL OF PHYSICS D-APPLIED PHYSICS, v. 47, n. 7, FEB 19 2014. Web of Science Citations: 9. (12/24055-6)
LEMINE, O. M.; ALKAOUD, A.; AVANCO GALETI, H. V.; GORDO, V. ORSI; GOBATO, Y. GALVAO; BOUZID, HOUCINE; HAJRY, A.; HENINI, M.. Thermal annealing effects on the optical and structural properties of (100) GaAs1-xBix layers grown by Molecular Beam Epitaxy. SUPERLATTICES AND MICROSTRUCTURES, v. 65, p. 48-55, JAN 2014. Web of Science Citations: 14. (12/24055-6)
ARAUJO E NOBREGA, J.; ORSI GORDO, V.; GALETI, H. V. A.; GALVAO GOBATO, Y.; BRASIL, M. J. S. P.; TAYLOR, D.; ORLITA, M.; HENINI, M.. Spin polarization of carriers in resonant tunneling devices containing InAs self-assembled quantum dots. SUPERLATTICES AND MICROSTRUCTURES, v. 88, p. 574-581, DEC 2015. Web of Science Citations: 2. (12/24055-6)
SOUTO, S.; HILSKA, J.; GOBATO, Y. GALVAO; SOUZA, D.; ANDRADE, M. B.; KOIVUSALO, E.; PUUSTINEN, J.; GUINA, M.. Raman spectroscopy of GaSb1-xBix alloys with high Bi content. Applied Physics Letters, v. 116, n. 20, MAY 18 2020. Web of Science Citations: 0. (14/50513-7, 16/10668-7)
BALANTA, M. A. G.; ORSI GORDO, V.; CARVALHO, A. R. H.; PUUSTINEN, J.; ALGHAMDI, H. M.; HENINI, M.; GALETI, H. V. A.; GUINA, M.; GALVAO GOBATO, Y.. Polarization resolved photoluminescence in GaAs1-xBix/GaAs quantum wells. Journal of Luminescence, v. 182, p. 49-52, FEB 2017. Web of Science Citations: 4. (14/50513-7, 12/24055-6)
AL MASHARY, FAISAL S.; DE CASTRO, SUELEN; DA SILVA, ARLON FERNANDO; FELIX, JORLANDIO FRANCISCO; PITON, MARCELO RIZZO; AVANCO GALETI, HELDER VINICIUS; RODRIGUES, ARIANO DE GIOVANNI; GOBATO, YARA GALVAO; AL SAQRI, NOOR; HENINI, MOHAMED; et al. Effect of growth techniques on the structural, optical and electrical properties of indium doped TiO2 thin films. Journal of Alloys and Compounds, v. 766, p. 194-203, OCT 25 2018. Web of Science Citations: 6. (16/10668-7, 14/50513-7)
BALANTA, M. A. G.; KOPACZEK, J.; ORSI GORDO, V.; SANTOS, B. H. B.; RODRIGUES, A. D.; GALETI, H. V. A.; RICHARDS, R. D.; BASTIMAN, F.; DAVID, J. P. R.; KUDRAWIEC, R.; et al. Optical and spin properties of localized and free excitons in GaBixAs1-x/GaAs multiple quantum wells. JOURNAL OF PHYSICS D-APPLIED PHYSICS, v. 49, n. 35, SEP 7 2016. Web of Science Citations: 7. (16/07239-7, 14/50513-7, 12/24055-6)
BALANTA, M. A. G.; DE OLIVEIRA, P. B. A.; ALBALAWI, H.; GALVAO GOBATO, Y.; GALETI, H. V. A.; RODRIGUES, A. D.; HENINI, M.; ALMOSNI, S.; ROBERT, C.; BALOCCHI, A.; et al. Effects of nitrogen incorporation and thermal annealing on the optical and spin properties of GaPN dilute nitride alloys. Journal of Alloys and Compounds, v. 814, JAN 25 2020. Web of Science Citations: 1. (16/10668-7, 14/50513-7)
GALETI, H. V. A.; GALVAO GOBATO, Y.; BRASIL, M. J. S. P.; TAYLOR, D.; HENINI, M.. Voltage- and Light-Controlled Spin Properties of a Two-Dimensional Hole Gas in p-Type GaAs/AlAs Resonant Tunneling Diodes. JOURNAL OF ELECTRONIC MATERIALS, v. 47, n. 3, p. 1780-1785, MAR 2018. Web of Science Citations: 0. (12/24055-6, 16/10668-7)
MONDAL, SANJIB; GHOSH, ANUPAM; RIZZO PITON, M.; GOMES, JOAQUIM P.; FELIX, JORLANDIO F.; GALVAO GOBATO, Y.; AVANCO GALETI, H. V.; CHOUDHURI, B.; DWIVEDI, S. M. M. DHAR; HENINI, M.; et al. Investigation of optical and electrical properties of erbium-doped TiO2 thin films for photodetector applications. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, v. 29, n. 22, p. 19588-19600, NOV 2018. Web of Science Citations: 3. (16/10668-7)
ORSI GORDO, V.; GALVO GOBATO, Y.; GALETI, H. V. A.; BRASIL, M. J. S. P.; TAYLOR, D.; HENINI, M.. Spin Polarization of Carriers in InGaAs Self-Assembled Quantum Rings Inserted in GaAs-AlGaAs Resonant Tunneling Devices. JOURNAL OF ELECTRONIC MATERIALS, v. 46, n. 7, p. 3851-3856, JUL 2017. Web of Science Citations: 2. (16/07239-7, 12/24055-6)
CARVALHO, A. R. H.; GORDO, V. ORSI; GALETI, H. V. A.; GOBATO, Y. GALVAO; DE GODOY, M. P. F.; KUDRAWIEC, R.; LEMINE, O. M.; HENINI, M.. Magneto-optical properties of GaBiAs layers. JOURNAL OF PHYSICS D-APPLIED PHYSICS, v. 47, n. 7, FEB 19 2014. Web of Science Citations: 9. (12/24055-6)
AWAN, I. T.; GALETI, H. V. A.; GALVAO GOBATO, Y.; BRASIL, M. J. S. P.; TAYLOR, D.; HENINI, M.. Effects of Be acceptors on the spin polarization of carriers in p-i-n resonant tunneling diodes. Journal of Applied Physics, v. 116, n. 5, AUG 7 2014. Web of Science Citations: 0. (11/20985-6, 12/24055-6)
ORSI GORDO, V.; BALANTA, M. A. G.; GALVAO GOBATO, Y.; COVRE, F. S.; GALETI, H. V. A.; IIKAWA, F.; COUTO, JR., O. D. D.; QU, F.; HENINI, M.; HEWAK, D. W.; et al. Revealing the nature of low-temperature photoluminescence peaks by laser treatment in van der Waals epitaxially grown WS2 monolayers. NANOSCALE, v. 10, n. 10, p. 4807-4815, MAR 14 2018. Web of Science Citations: 7. (16/10668-7, 14/50513-7, 12/11382-9, 16/16365-6)
GALETI, H. V. A.; BEZERRA, A. T.; GALVAO GOBATO, Y.; BRASIL, M. J. S. P.; TAYLOR, D.; HENINI, M.. Optical and electrical control of spin polarization of two-dimensional hole gases in p-type resonant tunnelling devices. JOURNAL OF PHYSICS D-APPLIED PHYSICS, v. 46, n. 50, DEC 18 2013. Web of Science Citations: 1. (12/24055-6)
GALETI, H. V. A.; BRASIL, M. J. S. P.; GALVAO GOBATO, Y.; HENINI, M.. Voltage controlled electron spin dynamics in resonant tunnelling devices. JOURNAL OF PHYSICS D-APPLIED PHYSICS, v. 47, n. 16, APR 25 2014. Web of Science Citations: 1. (11/20985-6, 12/24055-6)