| Full text | |
| Author(s): Show less - |
Mondal, Sanjib
[1, 2]
;
Ghosh, Anupam
[1]
;
Rizzo Piton, M.
[3]
;
Gomes, Joaquim P.
[4, 5]
;
Felix, Jorlandio F.
[6, 4]
;
Galvao Gobato, Y.
[3]
;
Avanco Galeti, H. V.
[7]
;
Choudhuri, B.
[8]
;
Dwivedi, S. M. M. Dhar
[1]
;
Henini, M.
[9, 10]
;
Mondal, Aniruddha
[1]
Total Authors: 11
|
| Affiliation: | [1] Natl Inst Technol Durgapur, Dept Phys, Durgapur 713209 - India
[2] Suri Vidyasagar Coll, Suri 731101, Birbhum - India
[3] Univ Fed Sao Carlos UFSCar, Dept Fis, BR-13565905 Sao Carlos, SP - Brazil
[4] Univ Fed Vicosa, Dept Phys, Vicosa, MG - Brazil
[5] IFNMG, Januaria, MG - Brazil
[6] Univ Brasilia, Inst Phys, BR-70910900 Brasilia, DF - Brazil
[7] Univ Fed Sao Carlos UFSCar, Dept Engn Eletr, BR-13565905 Sao Carlos, SP - Brazil
[8] Natl Inst Technol Nagaland, Dept Elect & Commun Engn, Dimapur 797103 - India
[9] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD - England
[10] Univ South Africa UNISA, Coll Grad Studies, UNESCO UNISA Africa Chair Nanosci, Nanotechnol Labs, POB 392, Pretoria - South Africa
Total Affiliations: 10
|
| Document type: | Journal article |
| Source: | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS; v. 29, n. 22, p. 19588-19600, NOV 2018. |
| Web of Science Citations: | 3 |
| Abstract | |
We have investigated the electrical and optical properties of erbium (Er3+) doped TiO2 thin films (Er:TiO2 TFs) grown by sol-gel technique on glass and silicon substrates. The samples were characterized by field emission gun-scanning electron microscopes (FEG-SEM), energy dispersive X-ray spectroscopy (EDX), atomic force microscopy (AFM), X-ray diffraction (XRD), photoluminescence (PL) and current-voltage measurement techniques. FEG-SEM and AFM images showed the morphological change in the structure of Er:TiO2 TFs and EDX analysis confirmed the Er3+ doped into TiO2 lattice. Broad PL emissions in visible and infrared regions were observed in undoped TiO2 samples and associated to different mechanisms due to the anatase and rutile phases. PL spectra revealed sharp peaks at 525nm, 565nm, 667nm and 1.54 mu m which are related to Er3+ emissions in Er:TiO2 samples. The undoped TiO2 and Er:TiO2 TFs based UV-photodetectors were fabricated, and various device parameters were investigated. The doped devices exhibit high photoresponse upon illuminating 350nm UV light at 2V bias with faster response time compared to undoped device. (AU) | |
| FAPESP's process: | 16/10668-7 - Optical and Transport Properties of two-dimensional semicondutors based on transition metal dichalcogenides |
| Grantee: | Yara Galvão Gobato |
| Support type: | Regular Research Grants |