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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Optical properties of GaAs1-xBix/GaAs quantum well structures grown by molecular beam epitaxy on (100) and (311)B GaAs substrates

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Gunes, M. [1] ; Ukelge, M. O. [1] ; Donmez, O. [2] ; Erol, A. [2] ; Gumus, C. [3] ; Alghamdi, H. [4] ; Galeti, H. V. A. [5] ; Henini, M. [4] ; Schmidbauer, M. [6] ; Hilska, J. [7] ; Puustinen, J. [7] ; Guina, M. [7]
Total Authors: 12
[1] Adana Sci & Technol Univ, Fac Engn, Dept Mat Engn, TR-01250 Adana - Turkey
[2] Istanbul Univ, Dept Phys, Fac Sci, TR-34134 Istanbul - Turkey
[3] Univ Cukurova, Phys Dept, TR-01330 Adana - Turkey
[4] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD - England
[5] Univ Fed Sao Carlos, Dept Engn Eletr, BR-13560905 Sao Carlos, SP - Brazil
[6] Leibmz Inst Crystal Growth, Max Born Str 2, D-12489 Berlin - Germany
[7] Tampere Univ Technol, Optoelect Res Ctr, Tampere - Finland
Total Affiliations: 7
Document type: Journal article
Source: Semiconductor Science and Technology; v. 33, n. 12 DEC 2018.
Web of Science Citations: 0

In this work, the electronic bandstructure of GaAs1-xBix/GaAs single quantum well (QW) samples grown by molecular beam epitaxy is investigated by photomodulated reflectance (PR) measurements as a function of Bi content (0.0065 <= x <= 0.0215) and substrate orientation. The Bi composition is determined via simulation of high-resolution x-ray diffraction measurement and is found to be maximized in the 2.15%Bi and 2.1%Bi samples grown on (100) and (311)B GaAs substrates. However, the simulations indicate that the Bi composition is not only limited in the GaAsBi QW layer but extends out of the GaAsBi QW towards the GaAs barrier and forms a GaAsBi epilayer. PR spectra are fitted with the third derivative function form (TDFF) to identify the optical transition energies. We analyze the TDFF results by considering strain-induced modification on the conduction band (CB) and splitting of the valence band (VB) due to its interaction with the localized Bi level and VB interaction. The PR measurements confirm the existence of a GaAsBi epilayer via observed optical transitions that belong to GaAsBi layers with various Bi compositions. It is found that both Bi composition and substrate orientation have strong effects on the PR signal. Comparison between TDFF and calculated optical transition energies provides a bandgap reduction of 92 meV/%Bi and 36 meV/%Bi and an interaction strength of the isolated Bi atoms with host GaAs valence band (C-BiM) of 1.7 eV and 0.9 eV for (100) and (311)B GaAs substrates, respectively. (AU)

FAPESP's process: 14/50513-7 - Tailoring the transport and optical properties if III-Bi-V nanostructures for advanced photonic devices
Grantee:Helder Vinícius Avanço Galeti
Support type: Regular Research Grants
FAPESP's process: 16/10668-7 - Optical and Transport Properties of two-dimensional semicondutors based on transition metal dichalcogenides
Grantee:Yara Galvão Gobato
Support type: Regular Research Grants