Analysis of p-type Junctionless Nanowire Transistors with Different Crystallographic Orientations

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Author(s):	Trevisoli, Renan ; Doria, Rodrigo T. ; de Souza, Michelly ; Pavanello, Marcelo A. ; IEEE Total Authors: 5
Document type:	Journal article
Source:	2017 32ND SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO): CHIP ON THE SANDS; v. N/A, p. 4-pg., 2017-01-01.
Abstract
This work presents an analysis of the influence of the crystal orientation on the performance of p-type Junctionless Nanowire Transistors. The main electrical parameters, such as threshold voltage, transconductance and subthreshold slope, were analyzed by means of experimental data, demonstrating that the substrate rotation can significantly worsen the electrical behavior of these devices. (AU)

FAPESP's process:	14/18041-8 - Electrical characterization and modeling of advanced electronic devices
Grantee:	Renan Trevisoli Doria
Support Opportunities:	Scholarships in Brazil - Post-Doctoral