Low-frequency noise measurements on SOI FinFETs operating as biosensitive elements

• Grant number: 19/23283-4
• Support Opportunities: Scholarships abroad - Research Internship - Doctorate
• Start date: March 01, 2020
• End date: February 28, 2021
• Field of knowledge: Engineering - Electrical Engineering
• Principal Investigator: João Antonio Martino
• Grantee: Carlos Augusto Bergfeld Mori
• Supervisor: Pol Van Dorpe
• Host Institution: Escola Politécnica (EP). Universidade de São Paulo (USP). São Paulo , SP, Brazil
• Institution abroad: University of Leuven, Leuven (KU Leuven), Belgium
• Associated to the scholarship: 17/26489-7 - Project and fabrication of a BE SOI Tunnel-FET as biosensitive element, BP.DR

Abstract

Biosensors play a fundamental role on the improvement of life expectation and its quality in present-day society, being extremely important to monitor in real time the development of diseases and even to prevent high-risk biological threats. Among the biosensitive platforms that are being studied and developed, micro and nanoelectronics devices built on SOI (Silicon-On-Insulator) substrates show great potential.This research project proposes the electrical characterization of a SOI FinFET device adapted for use as a biosensitive platform, in which its performance and physical principles will be evaluated from the observation of the transistors characteristic performance curves (inserted or not in biological medium) and from numerical simulations to study their physics. Besides the extraction of basic parameters, this project aims to study in detail the low-frequency noise in this kind of devices, since its behavior is so far not well stablished in the literature. (AU)

Scientific publications

(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)

SANTERMANS, S.; BARGE, D.; HELLINGS, G.; MORI, C. B.; MIGACZ, K. J.; RIP, J.; SPAMPINATO, V; VOS, R.; DU BOIS, B.; CHAUDHURI, A. R.; et al. 50 nm Gate Length FinFET Biosensor & the Outlook for Single-Molecule Detection. 2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), v. N/A, p. 4-pg., 2020-01-01. (19/23283-4)

MORI, CARLOS AUGUSTO BERGFELD; MARTENS, KOEN; SIMOEN, EDDY; VAN DORPE, POL; DER AGOPIAN, PAULA GHEDINI; MARTINO, JOAO ANTONIO. Signal to noise ratio in nanoscale bioFETs. Solid-State Electronics, v. 194, p. 5-pg., 2022-05-03. (17/26489-7, 19/23283-4)

MORI, C. A. B.; AGOPIAN, P. G. D.; MARTINO, J. A.; IEEE. Optimization of the Dual-Technology Back-Enhanced Field Effect Transistor. 2020 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS), v. N/A, p. 4-pg., 2020-01-01. (19/23283-4, 17/26489-7)