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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Revealing the nature of low-temperature photoluminescence peaks by laser treatment in van der Waals epitaxially grown WS2 monolayers

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Orsi Gordo, V. [1, 2] ; Balanta, M. A. G. [2, 3] ; Galvao Gobato, Y. [2] ; Covre, F. S. [2] ; Galeti, H. V. A. [4] ; Iikawa, F. [1] ; Couto, Jr., O. D. D. [1] ; Qu, F. [5] ; Henini, M. [6, 7] ; Hewak, D. W. [8] ; Huang, C. C. [8]
Total Authors: 11
[1] Univ Estadual Campinas, Inst Fis Gleb Wataghin, BR-13083859 Campinas, SP - Brazil
[2] Univ Fed Sao Carlos, Dept Fis, BR-13565905 Sao Carlos, SP - Brazil
[3] Univ Fed Uberlandia, FACIP, BR-38304402 Ituiutaba, MG - Brazil
[4] Univ Fed Sao Carlos, Dept Engn Eletr, BR-13565905 Sao Carlos, SP - Brazil
[5] Univ Brasilia, Inst Fis, BR-70919970 Brasilia, DF - Brazil
[6] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD - England
[7] Univ South Africa UNISA, Coll Grad Studies, Nanotechnol Labs, UNESCO UNISA Africa Chair Nanosci, POB 392, Pretoria - South Africa
[8] Univ Southampton, Optoelect Res Ctr, Southampton SO17 1BJ, Hants - England
Total Affiliations: 8
Document type: Journal article
Source: NANOSCALE; v. 10, n. 10, p. 4807-4815, MAR 14 2018.
Web of Science Citations: 7

Monolayers of transition metal dichalcogenides (TMD) are promising materials for optoelectronics devices. However, one of the challenges is to fabricate large-scale growth of high quality TMD monolayers with the desired properties in order to expand their use in potential applications. Here, we demonstrate large-scale tungsten disulfide (WS2) monolayers grown by van der Waals Epitaxy (VdWE). We show that, in addition to the large structural uniformity and homogeneity of these samples, their optical properties are very sensitive to laser irradiation. We observe a time instability in the photoluminescence (PL) emission at low temperatures in the scale of seconds to minutes. Interestingly, this change of the PL spectra with time, which is due to laser induced carrier doping, is employed to successfully distinguish the emission of two negatively charged bright excitons. Furthermore, we also detect blinking sharp bound exciton emissions which are usually attractive for single photon sources. Our findings contribute to a deeper understanding of this complex carrier dynamics induced by laser irradiation which is very important for future optoelectronic devices based on large scale TMD monolayers. (AU)

FAPESP's process: 14/50513-7 - Tailoring the transport and optical properties if III-Bi-V nanostructures for advanced photonic devices
Grantee:Helder Vinícius Avanço Galeti
Support type: Regular Research Grants
FAPESP's process: 16/16365-6 - Nanostructures of III-V semiconductors and their optical properties
Grantee:Fernando Iikawa
Support type: Regular Research Grants
FAPESP's process: 16/10668-7 - Optical and Transport Properties of two-dimensional semicondutors based on transition metal dichalcogenides
Grantee:Yara Galvão Gobato
Support type: Regular Research Grants
FAPESP's process: 12/11382-9 - Optical modulation of semiconductor nanostructures using surface acoustic waves
Grantee:Odilon Divino Damasceno Couto Júnior
Support type: Research Grants - Young Investigators Grants