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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Exciton localization and structural disorder of GaAs1-xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates

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Author(s):
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Prando, G. A. [1] ; Orsi Gordo, V. [1] ; Puustinen, J. [2] ; Hilska, J. [2] ; Alghamdi, H. M. [3] ; Som, G. [4] ; Gunes, M. [4] ; Akyol, M. [4] ; Souto, S. [5] ; Rodrigues, A. D. [1] ; Galeti, H. V. A. [6] ; Henini, M. [3] ; Galvao Gobato, Y. [1] ; Guina, M. [2]
Total Authors: 14
Affiliation:
[1] Univ Fed Sao Carlos, Dept Fis, BR-13565905 Sao Carlos, SP - Brazil
[2] Tampere Univ Technol, Optoelect Res Ctr, POB 692, FI-33101 Tampere - Finland
[3] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD - England
[4] Adana Sci & Technol Univ, Engn & Nat Sci Fac, Dept Mat Engn, TR-01250 Adana - Turkey
[5] Univ Sao Paulo, Fac Zootecnia & Engn Alimentos, Dept Ciencias Basicas, BR-13635900 Pirassununga, SP - Brazil
[6] Univ Fed Sao Carlos, Dept Engn Eletr, BR-13565905 Sao Carlos, SP - Brazil
Total Affiliations: 6
Document type: Journal article
Source: Semiconductor Science and Technology; v. 33, n. 8 AUG 2018.
Web of Science Citations: 0
Abstract

In this work, we have investigated the structural and optical properties of GaAs(1-x)Bix/GaAs single quantum wells (QWs) grown by molecular beam epitaxy on GaAs (311)B substrates using x-ray diffraction, atomic force microscopy, Fourier-transform Raman (FT-Raman) and photoluminescence spectroscopy techniques. The FT-Raman results revealed a decrease of the relative intensity ratio of transverse and longitudinal optical modes with the increase of Bi concentration, which indicates a reduction of the structural disorder with increasing Bi incorporation. In addition, the PL results show an enhancement of the optical efficiency of the structures as the Bi concentration is increased due to important effects of exciton localization related to Bi defects, nonradiative centers and alloy disorder. These results provide evidence that Bi is incorporated effectively into the QW region. Finally, the temperature dependence of the PL spectra has evidenced two distinct types of defects related to the Bi incorporation, namely Bi clusters and pairs, and alloy disorder and potential fluctuation. (AU)

FAPESP's process: 16/10668-7 - Optical ánd transport properties of two-dimensional semicondutors based on transition metal dichalcogenides
Grantee:Yara Galvão Gobato
Support type: Regular Research Grants
FAPESP's process: 14/50513-7 - Tailoring the transport and optical properties if III-Bi-V nanostructures for advanced photonic devices
Grantee:Helder Vinícius Avanço Galeti
Support type: Regular Research Grants
FAPESP's process: 12/24055-6 - Optical, electrical and spin properties of semiconductor nanostructures and nanodevices
Grantee:Yara Galvão Gobato
Support type: Regular Research Grants