| Full text | |
| Author(s): |
Paz, Bruna Cardoso
;
Pavanello, Marcelo Antonio
;
Casse, Mikael
;
Barraud, Sylvain
;
Reimbold, Gilles
;
Vinet, Maud
;
Faynot, Olivier
;
Sarafis, P
;
Nassiopoulou, AG
Total Authors: 9
|
| Document type: | Journal article |
| Source: | 2017 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS 2017); v. N/A, p. 4-pg., 2017-01-01. |
| Abstract | |
This work presents the performance and transport characteristics of vertically stacked p-MOSFET SOI nanowires (NWs) with inner spacers and epitaxial growth of SiGe raised source/drain. Electrical characterization is performed for NWs with [110] and [100] channel orientations, as a function of both fin width (W-FIN) and channel length (L). Results show a good electrostatic control and reduced short channel effects (SCE) down to 15nm gate length. Improved effective mobility is obtained for [110]-oriented NWs due to higher sidewall mobility contribution. (AU) | |
| FAPESP's process: | 15/10491-7 - Electrical characterization and tridimensional simulation of nanowires MOS transistors |
| Grantee: | Bruna Cardoso Paz |
| Support Opportunities: | Scholarships in Brazil - Doctorate |
| FAPESP's process: | 16/06301-0 - Electrical characterization and tridimensional simulation of nanowires MOS transistors |
| Grantee: | Bruna Cardoso Paz |
| Support Opportunities: | Scholarships abroad - Research Internship - Doctorate |