| Full text | |
| Author(s): |
Tong, Capucine
[1, 2]
;
Bidaud, Thomas
[2]
;
Koivusalo, Eero
[3]
;
Piton, Marcelo Rizzo
[3]
;
Guina, Mircea
[3]
;
Avanco Galeti, Helder Vinicius
[4]
;
Gobato, Yara Galvao
[5]
;
Cattoni, Andrea
[1, 2]
;
Hakkarainen, Teemu
[3]
;
Collin, Stephane
[1, 2]
Total Authors: 10
|
| Affiliation: | [1] Inst Photovolta Ile France IPVF, F-91120 Palaiseau - France
[2] Univ Paris Saclay, Ctr Nanosci & Nanotechnol C2N, CNRS, F-91120 Palaiseau - France
[3] Tampere Univ, Optoelect Res Ctr, Phys Unit, Korkeakoulunkatu 3, FI-33720 Tampere - Finland
[4] Univ Fed Sao Carlos, Elect Engn Dept, BR-13565905 Sao Carlos, SP - Brazil
[5] Univ Fed Sao Carlos, Phys Dept, BR-13565905 Sao Carlos, SP - Brazil
Total Affiliations: 5
|
| Document type: | Journal article |
| Source: | Nanotechnology; v. 33, n. 18 APR 30 2022. |
| Web of Science Citations: | 0 |
| Abstract | |
Cathodoluminescence mapping is used as a contactless method to probe the electron concentration gradient of Te-doped GaAs nanowires. The room temperature and low temperature (10 K) cathodoluminescence analysis method previously developed for GaAs:Si is first validated on five GaAs:Te thin film samples, before extending it to the two GaAs:Te NW samples. We evidence an electron concentration gradient ranging from below 1 x 10(18) cm(-3) to 3.3 x10(18) cm(-3) along the axis of a GaAs:Te nanowire grown at 640 degrees C, and a homogeneous electron concentration of around 6-8 x 10(17) cm(-3) along the axis of a GaAs:Te nanowire grown at 620 degrees C. The differences in the electron concentration levels and gradients between the two nanowires is attributed to different Te incorporation efficiencies by vapor-solid and vapor-liquid-solid processes. (AU) | |
| FAPESP's process: | 14/50513-7 - Tailoring the transport and optical properties if III-Bi-V nanostructures for advanced photonic devices |
| Grantee: | Helder Vinícius Avanço Galeti |
| Support Opportunities: | Regular Research Grants |
| FAPESP's process: | 19/23488-5 - 2D devices for optoeletronics |
| Grantee: | Yara Galvão Gobato |
| Support Opportunities: | Regular Research Grants |
| FAPESP's process: | 19/07442-5 - BISMIDES semiconductor nanostructures and novel materials for mid infrared applications |
| Grantee: | Helder Vinícius Avanço Galeti |
| Support Opportunities: | Regular Research Grants |